? 2009 ixys corporation, all rights reserved ds99945a(01/09) v ces = 600v i c110 = 48a v ce(sat) 2.5v t fi(typ) = 38ns genx3 tm 600v igbt with diode symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (limited by leads) 75 a i c110 t c = 110c 48 a i d110 t c = 110c 30 a i cm t c = 25c, 1ms 250 a i a t c = 25c 30 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 125c, r g = 3 i cm = 100 a (rbsoa) clamped inductive load @v ce < 600 v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c f c mounting torque 1.13/10 nm/lb.in weight 6 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces 300 a v ge = 0v t j = 125c 1.75 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 2.3 2.5 v t j = 125c 1.8 v high speed pt igbt for 40-100khz switching to-247 g c e ( tab ) g = gate c = collector e = emitter tab = collector IXGH48N60C3D1 features z optimized for low switching losses z square rbsoa z anti-parallel ultra fast diode z fast switching z avalanche rated z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGH48N60C3D1 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 20 30 s c ies 1960 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 202 pf c res 66 pf q g 77 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 16 nc q gc 32 nc t d(on) 19 ns t ri 26 ns e on 0.41 mj t d(off) 60 100 ns t fi 38 ns e off 0.23 0.42 mj t d(on) 19 ns t ri 26 ns e on 0.65 mj t d(off) 92 ns t fi 95 ns e off 0.57 mj r thjc 0.42 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 400v, r g = 3 inductive load, t j = 125c i c = 30a, v ge = 15v v ce = 400v, r g = 3 note 1: pulse test, t 300 s, duty cycle, d 2%. reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.7 v t j = 150c 1.6 v i rm t j = 100c 4 a t rr t j = 100c 100 ns 25 ns r thjc 0.9 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p i f = 30a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v
? 2009 ixys corporation, all rights reserved IXGH48N60C3D1 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0 2 4 6 8 101214161820 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 60a 30a 15a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 v ge - volts i c - amperes t j = -125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH48N60C3D1 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: g_48n60c3d1(5d)01-23-09-b fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 102030405060708090100110120 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 300v i c = 30a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 5 10 15 20 25 30 35 r g - ohms e off - millijoules 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 60a i c = 30a i c = 15a fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 60 70 80 90 100 110 120 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 , v ge = 15v v ce = 400v i c = 15a i c = 60a i c = 30a fig. 15. inductive turn-off switching times vs. gate resistance 70 75 80 85 90 95 100 105 110 115 120 125 130 0 5 10 15 20 25 30 35 r g - ohms t f - nanoseconds 50 75 100 125 150 175 200 225 250 275 300 325 350 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 30a i c = 15a i c = 60a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 3 , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 3 , v ge = 15v v ce = 400v i c = 60a i c = 30a i c = 15a fig. 16. inductive turn-off switching times vs. collector current 20 30 40 50 60 70 80 90 100 110 120 130 140 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 50 55 60 65 70 75 80 85 90 95 100 105 110 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 , v ge = 15v v ce = 400v t j = 125oc t j = 25oc IXGH48N60C3D1
ixys reserves the right to change limits, test conditions, and dimensions. IXGH48N60C3D1 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 110 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 15 16 17 18 19 20 21 22 23 24 25 26 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 , v ge = 15v v ce = 400v 25oc < tj < 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 17 18 19 20 21 22 23 24 25 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 , v ge = 15v v ce = 400v i c = 30a i c = 60a i c = 15a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 60a i c = 15a, 30a ixys ref: g_48n60c3d1(5d)01-23-09-b
? 2009 ixys corporation, all rights reserved 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 23. peak reverse current i rm versus -di f /dt fig. 22. reverse recovery charge q r versus -di f /dt fig. 21. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 27. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c fig. 24. dynamic parameters q r , i rm versus t vj IXGH48N60C3D1
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